Thin film thermoelectric devices having favorable crystal tilt
US9190592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/17
Abstract
A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.