Patent · US Active

Thin film thermoelectric devices having favorable crystal tilt

US9190592B2 · kind B2 · utility

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2References
27Claims
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Inventors

Key dates

Filing dateMar 15, 2013
Grant dateNov 17, 2015
Priority date
Expiry dateMay 30, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N10/17

Abstract

A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.