Method of forming a suspended structure and a transistor co-integrated on a same substrate
US9193582B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0771
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.