Etchant composition and etching method
US9193904B2 · kind B2 · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.