Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use

US9194046B2 · kind B2 · utility

Assignee

• EVONIK DEGUSSA GMBH · DE

Inventors

• Arne Hoppe · Herne, DE
• Alexey Merkulov · Ludwigshafen, DE
• Juergen Steiger · Taipei, TW
• Duy Vu Pham · Oberhausen, DE
• Yvonne Damaschek · Recklinghausen, DE
• Heiko Thiem · Bensheim, DE

Key dates

• Filing date: Feb 5, 2010
• Grant date: Nov 24, 2015
• Expiry date: Oct 21, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C18/1216
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.