Method for providing a magnetoresistive element having small critical dimensions
US9196270B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.