Nonvolatile memory device having split ground selection line structures
US9196364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2014 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Apr 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.