Method for measuring data retention characteristic of resistive random access memory device
US9196380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2012 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0073
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for measuring data retention characteristic of an RRAM device includes: a) controlling a temperature of a sample stage to maintain the RRAM device at a predetermined temperature; b) setting the RRAM device to a high-resistance state or a low-resistance state; c) measuring data retention time by applying a predetermined voltage to the RRAM device so that a resistive state failure of the RRAM device occurs; d) repeating the steps a)-c) to perform a plurality of measurements; e) calculating a resistive state failure probability F(t) of the RRAM device from the data retention time in the plurality of measurements; and f) fitting the resistive state failure probability F(t), and calculating predicted data retention time tE by using parameters obtained from the fitting. The data retention time of the RRAM device may be predicted by combining voltage acceleration and temperature acceleration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.