Method for reducing crosstalk in image sensors using implant technology
US9196646B2 · kind B2 · utility
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14References
20Claims
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Key dates
| Filing date | May 10, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Feb 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.