Semiconductor device
US9196731B2 · kind B2 · utility
3Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Aug 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Sometimes to warp a group III nitride semiconductor and a silicon by the stress of the group III nitride semiconductor acting on the silicon. A semiconductor device includes a substrate, a buffer layer, and a semiconductor layer. A trench is formed on a sixth face of the semiconductor layer. The trench passes through the semiconductor layer and the buffer layer. The bottom of the trench reaches at least the inside of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.