Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same
US9196746B2 · kind B2 · utility
1Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Jun 4, 2012 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.