Solar cell emitter region fabrication with differentiated p-type and n-type region architectures

US9196758B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• Seung Bum Rim · Pleasanton, US
• David D. Smith · Dublin, US
• Taiqing Qiu · Los Gatos, US
• Staffan Westerberg · Sunnyvale, US
• Kieran Mark Tracy · San Jose, US
• Venkatasubramani Balu · Santa Clara, US

Key dates

• Filing date: Dec 20, 2013
• Grant date: Nov 24, 2015
• Expiry date: Feb 21, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.