Patent · US Active

Method for insulating nanowires or mircowires

US9196783B2 · kind B2 · utility

2Cited by

2References

27Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Alexandre Lagrange · St-Estève, FR
Stephan Landis · Voiron, FR

Key dates

Filing date	Jan 23, 2013
Grant date	Nov 24, 2015
Priority date	—
Expiry date	Jan 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/14
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for producing a microelectronic device including a plurality of light emitting diodes each including a wire of nanometric or micrometric size, the method including: growing the nanowires from a growth substrate; forming at least one dielectric layer on a transfer substrate distinct from the growth substrate; and penetration by the nanowires in the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.