Semiconductor light emitting element and method for manufacturing the same
US9196803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2012 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
[Object][Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.