Piezoelectric pressure sensor having piezoelectric material covering electrodes

US9196820B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Mohammed Benwadih · Champigny-sur-Marne, FR
• Abdelkader Aliane · Grenoble, FR

Key dates

• Filing date: Feb 12, 2014
• Grant date: Nov 24, 2015
• Expiry date: Feb 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/302
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A pressure sensor including a lower substrate having two electrodes partially covered with a semiconductor layer and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, deposited thereon. The electrodes are intended to be connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of the electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer.