Patent · US Active

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

US9196846B2 · kind B2 · utility

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Key dates

Filing dateApr 15, 2015
Grant dateNov 24, 2015
Priority date
Expiry dateApr 15, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K10/484
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.