Substrate and secondary battery
US9196900B2 · kind B2 · utility
0Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm−1, a second peak in a range of 630 to 720 cm−1, and a third peak in a range of 800 to 810 cm−1 in Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 μm or more. The semiconductor layer has a porosity of 20 to 80 vol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.