Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
US9201112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | May 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip. The tip of the Fin may then be sharpened by the focused ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.