Patent · US Active

Semiconductor device having at least one contact, and manufacturing method for a semiconductor device having at least one contact

US9202702B2 · kind B2 · utility

0Cited by

6References

10Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Frederik Schrey · Leonberg, DE
Achim Trautmann · Leonberg, DE
Joachim Rudhard · Echterdingen, DE

Key dates

Filing date	Apr 13, 2012
Grant date	Dec 1, 2015
Priority date	—
Expiry date	Jul 12, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.