Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
US9202882B2 · kind B2 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a power device, such as a power MOSFET device and a method for fabricating same. The device includes a field plate trench. The field plate trench has a predetermined width and a predetermined sidewall angle. The device further includes a single trench dielectric on sidewalls of the field plate trench and at a bottom of the field plate trench. The single trench dielectric has a bottom thickness that is greater than a sidewall thickness. The device also includes a field plate situated within the single trench dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.