Method for fabricating a Schottky diode including a guard ring overlapping an insolation layer
US9202886B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the isolation layer and located at a left side of the isolation layer, a second conductive type well formed in the deep well along the outer sidewall of the isolation layer and located at a right side of the isolation layer, an anode electrode formed over the substrate and coupled to the deep well and the guard ring, and a cathode electrode formed over the substrate and coupled to the well. A part of the guard ring overlaps the isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.