TFT, method of manufacturing the TFT, and method of manufacturing organic light emitting display device including the TFT
US9202896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.