Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same

US9202901B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Jun Fu · Beijing, CN
• Yu Wang · Beijing, CN
• Wei Zhang
• Gao-qing Li · Beijing, CN
• Zheng-li Wu · Beijing, CN
• Jie Cui · San Jose, US
• Yue Zhao · Beijing, CN
• Zhi Hong Liu · Beijing, CN

Key dates

• Filing date: Feb 25, 2014
• Grant date: Dec 1, 2015
• Expiry date: Feb 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/021

Abstract

The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance RB of the prior art products. The metal silicide self-aligned SiGe heterojunction bipolar transistor of the present invention mainly comprises an Si collector region, a local dielectric region, a base region, a base-region low-resistance metal silicide layer, a polysilicon emitter region, an emitter-base spacer dielectric region composed of a liner silicon oxide layer and a silicon nitride inner sidewall, a monocrystalline emitter region, a contact hole dielectric layer, an emitter metal electrode and a base metal electrode. The base-region low-resistance metal silicide layer extends all the way to the outside of the emitter-base spacer dielectric region. The present invention discloses a method of forming a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is used to form the aforesaid bipolar transistor. The metal silicide self-aligned SiGe heterojunction bipolar transistor and the method of forming the same of the present invention can reduce the base resistance RB, and featu…