Semiconductor device
US9202940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.