Imaging devices with solid-state radiation detector with improved sensitivity
US9202961B2 · kind B2 · utility
8Cited by
32References
25Claims
0Family size
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Key dates
| Filing date | Jun 5, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Dec 24, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.