Patent · US Active

Method for producing a thin-film semiconductor body and thin-film semiconductor body

US9202967B2 · kind B2 · utility

0Cited by

6References

11Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christian Leirer · Friedberg, DE
Anton Vogl · Sinzing, DE
Andreas Biebersdorf · Regensburg, DE
Rainer Butendeich · Regensburg, DE
Christian Rumbolz · Lappersdorf, DE

Key dates

Filing date	Feb 28, 2012
Grant date	Dec 1, 2015
Priority date	—
Expiry date	Feb 28, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.