Nitride semiconductor light emitting device and method of manufacturing the same
US9202969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Nov 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A method of manufacturing a nitride semiconductor light emitting device which includes forming an n-type semiconductor layer, forming an active layer on the n-type semiconductor layer, forming a superlattice layer by alternately stacking at least two nitride layers made of InxAlyGa(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) having different energy bandgaps from each other and doped with a p-type dopant, and forming a p-type semiconductor layer on the superlattice layer. The forming of the superlattice layer is performed by adjusting a flow rate of a p-type dopant source gas to reduce the flow rate in a growth termination period of the superlattice layer by no greater than about half of the flow rate in a growth initiation period of the superlattice layer while being doped with the p-type dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.