Manufacturing magnetic sensor elements monolithically integrated at a semiconductor chip comprising an integrated circuit
US9203016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit. The described method comprises (a) providing a composite semiconductor arrangement (105) comprising (i) the semiconductor chip (110), (ii) contact elements (112) for the integrated circuit, which are formed on the semiconductor chip (110), and (iii) a dielectric layer (120) formed over the semiconductor chip (110) and over the contact elements (112), (b) forming a magnetic sensor layer providing the material for the magnetic sensor elements (130, 330, 430) monolithically over the dielectric layer (120), (c) exposing the contact elements (112) by removing a part of the dielectric layer (120) which part is located above the contact elements (112), and (d) forming an electric conductive protection layer (140, 240, 340, 440) over either the formed magnetic sensor layer or the exposed contact elements (112) in order to prevent negative interactions between (i) the step of forming the magnetic sensor elements (130, 330, 430) resulting from the magnetic sensor lay…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.