Film bulk acoustic resonator comprising a bridge
US9203374B2 · kind B2 · utility
7Cited by
353References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2011 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/04
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.