Patent · US Active

Inhibiting background plating

US9206520B2 · kind B2 · utility

25Cited by
26References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 31, 2009
Grant dateDec 8, 2015
Priority date
Expiry dateMar 5, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Methods include selectively depositing a phase change resist having high light transmittance onto a dielectric to form a pattern, etching away portions of the dielectric not covered by the resist and depositing a metal seed layer on the etched portions of the dielectric. A metal layer is then deposited on the metal seed layer by light induced plating.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.