Patent · US Active

Conductivity based on selective etch for GaN devices and applications thereof

US9206524B2 · kind B2 · utility

9Cited by
2References
51Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 26, 2012
Grant dateDec 8, 2015
Priority date—
Expiry dateAug 30, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24997
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.