Nanostructure device and method for manufacturing nanostructures
US9206532B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 18, 2010 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12396
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.