Two-dimensional electron gas sensor and methods for making and using the sensor
US9207203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG. The 2DEG layer stack of the sensor comprises a contact surface contacting the space and provided to contact molecules of the fluidum which is desired to be detected, and the gate of the sensor comprises a doped semiconductor bottom layer of the 2DEG layer stack in electrical contact with at least one gate electrode, where the doped semiconductor bottom layer being located at a side of the 2DEG layer stack opposing the contact surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.