Patent · US Active

Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks

US9209009B2 · kind B2 · utility

3Cited by

4References

12Claims

0Family size

Assignee

Wacker Chemie AG · DE

Inventors

Gerhard Traunspurger · Burghausen, DE
Laszlo Fabry · Burghausen, DE
Reiner Pech · Vilshofen an der Donau, DE

Key dates

Filing date	Feb 21, 2013
Grant date	Dec 8, 2015
Priority date	—
Expiry date	Aug 4, 2034

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01P2006/80
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.