Method of fabricating a thin-film device
US9209026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.