Semiconductor device having ground shield structure and fabrication method thereof
US9209130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.