Patent · US Active

Electrostatic discharge protection

US9209170B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

DNAe Group Holdings Limited · GB

Inventors

David P. Garner · Lexington, US
Hua Bai · Knoxville, US

Key dates

Filing date	Oct 6, 2011
Grant date	Dec 8, 2015
Priority date	—
Expiry date	Apr 30, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/921
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A device comprising an electrostatic discharge protection structure (8), an ion sensitive field effect transistor (ISFET) having a floating gate (5,6,7,9,10), and a sensing layer (12) located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.