Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
US9209171B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Oct 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.