Active matrix substrate and method for manufacturing the same
US9209203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor includes: a semiconductor channel film; a gate insulating film on the semiconductor channel film; a gate electrode formed of a laminated film including a first conductive film and a second conductive film on the gate insulating film; an interlayer insulating film covering the semiconductor channel film, the gate insulating film, and the gate electrode; a source electrode formed of a laminated film including a third conductive film and a fourth conductive film formed on the interlayer insulating film; and a drain electrode formed of the third conductive film. A gate wiring is formed of the laminated film including the first conductive film and the second conductive film. A source wiring is formed of the laminated film including the third conductive film and the fourth conductive film. A pixel electrode is formed of the first conductive film. A counter electrode is formed of the third conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.