Semiconductor device and method of fabricating the same
US9209214B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | May 14, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8027
Abstract
A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.