Semiconductor devices including a recessed active region, and methods of forming semiconductor devices including a recessed active region
US9209241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. Each of the semiconductor devices may include a substrate including an active region that includes first and second regions. Each of the semiconductor devices may include a device isolation layer between the first and second regions of the active region. Each of the semiconductor devices may include a contact hole defined by recessed portions of the device isolation layer and the first region of the active region, respectively. Moreover, a topmost surface of the first region of the active region may define a bottommost portion of the contact hole. Related methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.