Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9209267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2015 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.