Method of manufacturing thin film transistor substrate and thin film transistor substrate manufactured by the method
US9209282B2 · kind B2 · utility
2Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes at least a step forming a source electrode (32) and a drain electrode (33), each of which is a multilayer film of a first conductive film (32a), (33a) made of titanium or molybdenum, a second conductive film (32b), (33b) made of copper, and a third conductive film (32c), (33c) made of titanium oxide, a step of forming passivation film (18), which is an inorganic insulating film, on an oxide semiconductor layer (13), the source electrode (32) and drain electrode (33), and an annealing step of annealing the oxide semiconductor layer (13).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.