Shallow trench textured regions and associated methods
US9209345B2 · kind B2 · utility
15Cited by
52References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Nov 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.