Phase change memory and fabrication method

US9209387B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventor

• Ying Li · Shanghai, CN

Key dates

• Filing date: Sep 23, 2014
• Grant date: Dec 8, 2015
• Expiry date: Sep 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory and its fabrication method are provided. A bottom electrode structure is provided through a substrate. A mask layer is formed on the substrate and the bottom electrode structure. A first opening is formed in the mask layer to expose the bottom electrode structure. A spacer is formed on sidewalls and bottom surface portions of the first opening to expose a surface portion of the bottom electrode structure. The first opening including the spacer therein has a bottom width less than a top width. A heating layer is formed at least on the surface portion of the bottom electrode structure exposed by the spacer. A phase change layer is formed on the heating layer to completely fill the first opening. A top electrode is formed on the phase change layer and the mask layer.