Layer-selective laser ablation patterning
US9209400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2006 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Dec 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution process able semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.