Monolithically integrated tunable semiconductor laser
US9209601B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising a laser chip having epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a passive section, wherein at least one of the reflectors is a distributed Bragg reflector section comprising a grating and configured to have a tunable reflection spectrum, wherein the laser is provided with a common earth electrode, wherein control electrodes are provided on the optical waveguide in at least the optical gain section and the at least one distributed Bragg reflector section, wherein the passive section is provided with an electrode or electrical tracking on the optical waveguide, the passive section is configured not to be drivable by an electrical control signal, and no grating is present within the passive section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.