Monolithically integrated tunable semiconductor laser
US9209602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2012 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Aug 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a non-driven region, wherein at least one of the reflectors is a distributed Bragg reflector section configured to have a tunable reflection spectrum, wherein control electrodes are provided to at least the optical gain section, and the distributed Bragg reflector section, and wherein the non-driven region has a length of at least 100 μm, is without an electrical contact directly contacting onto the epitaxially grown side of the non-driven region, and the non-driven region is without a reflective Bragg grating within the epitaxial layers of the non-driven region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.