Production method of high-density SIM card package
US9210813B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2010 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Sep 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-density Subscriber Identity Module (SIM) card package and a production method thereof are provided. The SIM card package includes a substrate, an Integrated Circuit (IC) chip, a bonding wire, and a mold cap. The substrate is a two-layer, a four-layer, a six-layer or an eight-layer high-density interlinked and packaged organic laminated substrate that is manufactured through an etching-back process, and a passive device and a crystal oscillator are provided on the organic laminated substrate. Two IC chips are provided side by side, or one of the IC chips is stacked with a third IC chip, the third IC chip being respectively connected to the organic laminated substrate and the IC chip under the third IC chip by the bonding wire. The IC chip, the passive device, and the crystal oscillator are adhered to the organic laminated substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.