Power semiconductor module having layered insulating side walls

US9210826B2 · kind B2 · utility

Assignees

• Siemens Aktiengesellschaft · DE
• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Markus Billmann · Emskirchen, DE
• Christoph Bloesch · Bubenreuth, DE
• Dirk Malipaard · Nuremberg, DE
• Andreas Zenkner · Herzogenaurach, DE

Key dates

• Filing date: Mar 13, 2009
• Grant date: Dec 8, 2015
• Expiry date: Oct 10, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.