Method of making nanostructure
US9213241B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 2, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Apr 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.